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| Eudyna GaN-HEMT 30W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 46.0dBm (typ.) @ P3dB High Efficiency: 55%(typ.) @ P3dB Linear Gain : 13.0dB(typ.) @ f=3.5GHz Proven Reliability ES/EGN35A030MK High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item Symbol VDS IGF IGR Tch DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P im l e Condition RG=15 RG=15 Vp VGDO P3dB d GL Rth VDS VGS Tc=25oC Pt Tstg Tch ry a in Rating Unit V V W oC oC 120 -5 75 -65 to +175 250 Limit 50 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=11mA IGS=- 5.6 mA VDS=50V IDS(DC)=200mA f=3.5GHz Channel to Case TBD -1.0 TBD Limit Typ. Max. -2.0 -350 46.0 55 13.0 2.5 -3.5 3.0 Unit V V dBm % dB oC/W Edition 1.2 Dec. 2005 1 ES/EGN35A030MK High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=200mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=200mA f=3.5GHz 50 48 46 Output Power [dBm] 50 48 46 Output Power [dBm] 44 42 40 38 36 34 32 30 100 90 80 70 60 50 Drain Effciency [%] 44 42 40 38 36 34 32 30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 Frequency [GHz] Pin=20dBm Pin=32dBm Pin=24dBm Pin=36dBm r P 80 70 60 50 40 30 20 10 0 Total Power Dissipasion [W] im l e Pin=28dBm a in ry Input Power [dBm] 40 30 20 10 0 18 20 22 24 26 28 30 32 34 36 38 Power Derating Curve 0 50 100 150 200 o 250 300 Case Temperature [ C] Edition 1.2 Dec. 2005 2 ES/EGN35A030MK High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=200mA, f=2 to 5 GHz, Zl = Zs = 50 ohm +50j +25j 10 25 50 3.5GHz +100j +10j 0 3.5GHz -10j -25j -50j -100j r P +90 180 6 Scale for |S21| 3.5GHz im l e 3.5GHz Freq [GHz] 2.0 2.1 2.2 2.3 2.4 +250j 2.5 2.6 2.7 2.8 2.9 3.0 -250j 3.1 3.2 3.3 S11 3.4 S22 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 0 4.9 5.0 ry a in S11 ANG MAG 0.912 166.9 0.908 165.8 0.902 164.6 0.899 163.5 0.892 162.1 0.886 160.7 0.877 159.3 0.869 157.5 0.861 155.9 0.847 154.1 0.835 152.2 0.820 150.2 0.797 148.4 0.773 146.8 0.742 145.2 0.708 144.0 0.670 143.7 0.633 144.7 0.609 147.1 0.598 150.3 0.603 153.6 0.630 155.9 0.666 156.6 0.701 156.1 0.731 154.5 0.754 152.5 0.773 150.0 0.786 147.4 0.803 144.7 0.816 142.2 0.822 139.3 S21 MAG ANG 1.387 -4.8 1.348 -8.3 1.313 -11.5 1.297 -14.9 1.280 -18.4 1.279 -22.1 1.277 -25.8 1.303 -29.6 1.332 -34.1 1.362 -38.8 1.415 -44.3 1.469 -49.8 1.533 -55.8 1.620 -62.5 1.692 -69.9 1.789 -78.7 1.875 -88.6 1.963 -98.7 2.022 -110.4 2.029 -121.9 2.018 -134.2 1.948 -146.4 1.859 -157.9 1.762 -168.6 1.647 -178.3 1.548 172.5 1.455 163.5 1.382 155.3 1.331 146.9 1.281 139.4 1.262 131.3 S12 MAG ANG 0.005 52.2 0.006 56.0 0.006 55.6 0.007 60.4 0.007 60.8 0.009 59.6 0.009 61.8 0.010 60.8 0.011 58.0 0.013 58.2 0.014 52.6 0.015 49.4 0.017 45.5 0.018 41.2 0.019 34.1 0.021 29.3 0.022 20.7 0.023 12.7 0.023 4.0 0.022 -4.2 0.020 -11.0 0.019 -18.7 0.017 -22.3 0.014 -23.1 0.013 -22.1 0.011 -16.1 0.011 -10.1 0.011 1.9 0.013 9.9 0.015 9.3 0.018 12.1 S22 MAG 0.832 0.838 0.841 0.845 0.847 0.851 0.849 0.851 0.852 0.852 0.855 0.853 0.858 0.858 0.864 0.876 0.887 0.899 0.919 0.931 0.948 0.953 0.952 0.952 0.940 0.937 0.915 0.902 0.886 0.866 0.846 ANG -155.8 -157.4 -158.7 -160.2 -161.6 -162.8 -164.1 -165.2 -166.8 -167.8 -169.4 -170.5 -172.1 -173.8 -175.2 -177.0 -178.7 179.3 176.5 173.5 170.0 165.7 161.8 157.0 152.2 147.6 142.3 137.4 131.0 123.9 115.8 S12 0.06 Scale for |S 12| -90 S21 Edition 1.2 Dec. 2005 3 ES/EGN35A030MK MK Package Outline Metal-Ceramic Hermetic Package r P im l e ry a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4 |
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